Dual gate material (Au and Pt) based double-gate MOSFET for high-speed devices
| Autor: | Naveenbalaji Gowthaman, Viranjay M Srivastava |
|---|---|
| Jazyk: | Spanish; Castilian |
| Rok vydání: | 2021 |
| Předmět: | |
| Zdroj: | Tecnología en Marcha, Pp ág 10-16 (2021) |
| Druh dokumentu: | article |
| ISSN: | 0379-3982 2215-3241 |
| DOI: | 10.18845/tm.v34i6.5966 |
| Popis: | Aluminium Gallium Arsenide (AlGaAs) is a semiconductor material used in the latest design of double heterostructure laser diodes. This semiconductor is mostly available in the arbitrary alloy form between Gallium Arsenide and Aluminium Arsenide. It is derived from the Tri-MethylGallium (TMG/TMGa), and Arsine (AsH3), both the chemicals are pyrophoric and toxic. The resistance is less between source and drain contacts in the case of AlGaAs so that it has been proposed as a material to grow contacts on Indium Phosphide (InP) layer. The AlGaAs uses an ion implantation model for a design purpose which lowers the thermal power while the operation of the device. The parasitic capacitance has to be taken care of while designing a device using this material since the capacitance affects much in the AlGaAs based devices. The average velocity of the electrons has been observed to be increased by 14.63 % in the Au-gate (gate-1) and Pt-gate (gate-2) material-based Double-Gate (DG) MOSFET compared to the Silicon-based DG MOSFET. This paves the way for higher electron mobility, in turn, it can be used in highfrequency device manufacturing. The proposed material can be used in high-speed hybrid applications such as HEMTs and radiofrequency devices for long-haul communication. |
| Databáze: | Directory of Open Access Journals |
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