| Autor: |
Dewu Yue, Ximing Rong, Shun Han, Peijiang Cao, Yuxiang Zeng, Wangying Xu, Ming Fang, Wenjun Liu, Deliang Zhu, Youming Lu |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
Membranes, Vol 11, Iss 12, p 952 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2077-0375 |
| DOI: |
10.3390/membranes11120952 |
| Popis: |
Black phosphorus (BP), a single elemental two-dimensional (2D) material with a sizable band gap, meets several critical material requirements in the development of future nanoelectronic applications. This work reports the ambipolar characteristics of few-layer BP, induced using 2D transparent hexagonal boron nitride (h-BN) capping. The 2D h-BN capping have several advantages over conventional Al2O3 capping in flexible and transparent 2D device applications. The h-BN capping technique was used to achieve an electron mobility in the BP devices of 73 cm2V−1s−1, thereby demonstrating n-type behavior. The ambipolar BP devices exhibited ultrafast photodetector behavior with a very high photoresponsivity of 1980 mA/W over the ultraviolet (UV), visible, and infrared (IR) spectral ranges. The h-BN capping process offers a feasible approach to fabricating n-type behavior BP semiconductors and high photoresponse BP photodetectors. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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