| Autor: |
Xiao Sun, Peng Liu, Xiangen Ma, Xiaodong Zhang, Jian Su, Kang Chen, Qi Liu, Kai Jiang, Wenjing Tang, Wei Xia, Xiangang Xu |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
Photonics, Vol 10, Iss 3, p 302 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2304-6732 |
| DOI: |
10.3390/photonics10030302 |
| Popis: |
Traditional laser diodes operating at 650 nm are more prone to high-order mode excitation, resulting in poorer beam quality. In this paper, we designed GaInP–AlGaInP laser diodes (LD) with a 650 nm range and a trench mode-modulation structure based on the structure of edge-emitting laser (EEL) diodes. The effect of the three-trench structure was investigated theoretically and experimentally. The right trench structure laser chips demonstrated good beam quality while maintaining a high power output. An electro-optical conversion efficiency of 56% was demonstrated with a slope efficiency of 1.32 W/A at a 40 mA current. The maximum optical output power reached 40.8 mW. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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