| Autor: |
Yajie Li, Guibin Chen, Kinman Yu, Wladyslaw Walukiewicz, Weiping Gong |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
Crystals, Vol 11, Iss 9, p 1079 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2073-4352 |
| DOI: |
10.3390/cryst11091079 |
| Popis: |
As-grown Ar-deposited Cd1−xVxO and Ar/O2-deposited Cd1−yVyO feature lower and higher electron concentrations than 4 × 1020 cm−3, respectively. After isothermal and isochronal annealing under N2 ambient, we find that the two series exhibit a decrease or increase in electron concentrations until ~4 × 1020 cm−3 which is close to Fermi stabilization energy (EFS) level of CdO, with the assistance of native defects. An amphoteric defects model is used to explain the changing trends in electron concentrations. The tendencies in mobility further confirm our results. This work may provide some strategies to predict the electrical properties in CdO. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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