| Autor: |
Shu-Bai Liu, Shoou-Jinn Chang, Sheng-Po Chang, Chia-Hsun Chen |
| Jazyk: |
angličtina |
| Rok vydání: |
2020 |
| Předmět: |
|
| Zdroj: |
IEEE Photonics Journal, Vol 12, Iss 4, Pp 1-8 (2020) |
| Druh dokumentu: |
article |
| ISSN: |
1943-0655 |
| DOI: |
10.1109/JPHOT.2020.3001582 |
| Popis: |
The authors report the deposition of an (AlxGa1-x)2O3 amorphous thin film on sapphire substrates by sputter deposition. An amorphous deep ultraviolet (UV) (Al0.12Ga0.88)2O3 photodetector, with a cutoff wavelength at 230 nm, was also fabricated. With -10 V applied bias, it was found the dark leakage current and the linear dynamic range (LDR) of the fabricated photodetector were about 1.23 × 10-9 A and 59.51 dB, respectively. With the same -10 V applied bias, the UVC/UVA contrast ratio was larger than 20. With λillumination = 230 nm and -5 V applied bias, it was found noise equivalent power (NEP) and detectivity (D*) of the fabricated amorphous deep UV (Al0.12Ga0.88)2O3 photodetector were 9.94 × 10-11 W and 2.11 × 1010 cmHz1/2W-1, respectively. These results suggest the fabricated amorphous deep UV (Al0.12Ga0.88)2O3 photodetector herein indicate a cost-effective solution for developing DUV photodetector applications. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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