| Autor: |
Qi Wang, Zhigang Jia, Xiaomin Ren, Yingce Yan, Zhiqiang Bian, Xia Zhang, Shiwei Cai, Yongqing Huang |
| Jazyk: |
angličtina |
| Rok vydání: |
2013 |
| Předmět: |
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| Zdroj: |
AIP Advances, Vol 3, Iss 7, Pp 072111-072111 (2013) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/1.4815971 |
| Popis: |
In this research, 5-period highly-strained BInGaAs/GaAs multiple quantum wells (MQWs) have been successfully grown at 480-510ºC by LP-MOCVD. Room-temperature photoluminescence (RT-PL) measurements of BInGaAs/GaAs MQWs showed the peak wavelength as long as 1.17 μm with full-width at half maximum (FWHM) of only 29.5 meV. In addition, a slight blue-shift (∼18 meV) of PL peak energy of InxGa1-xAs/GaAs MQWs was observed after boron incorporation. It has been found boron incorporation ( 40%), the positive effect of boron incorporation prevailed, i.e., boron incorporation completely suppressed the thickness undulation and lead to the improvement of PL properties. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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