Phase Transition Field Effect Transistor Observed in an α-(BEDT-TTF)2I3 Single Crystal

Autor:	Ryosuke Ando, Ryo Watanuki, Kazuhiro Kudo, Hyuma Masu, Masatoshi Sakai
Jazyk:	angličtina
Rok vydání:	2023
Předmět:	charge order field-effect transistor BEDT-TTF electron correlation organic phase transition transistor Chemistry QD1-999
Zdroj:	Solids, Vol 4, Iss 3, Pp 201-212 (2023)
Druh dokumentu:	article
ISSN:	2673-6497
DOI:	10.3390/solids4030013
Popis:	The metal–insulator transition induced by the gate electric field in the charge order phase of the α-(BEDT-TTF)2I3 single-crystal field-effect transistor (FET) structure was clearly observed near the phase transition temperature. An abrupt increase in the electrical conductance induced by the applied gate electric field was evident, which corresponds to the partial dissolution of the charge order phase triggered by the gate electric field. The estimated nominal dissolved charge order region (i.e., the gate-induced metallic region) was overestimated in 130–150 K, suggesting additional effects such as Joule heating. On the other hand, in the lower temperature region below 120 K, the corresponding dissolved charge order was several monolayers of BEDT-TTF, suggesting that it is possible to dissolve the charge order phase within the bistable temperature region.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/21dbaf357fde4dbdae52084473f54a10 Zobrazit plný text záznamu View record in DOAJ Plný text ve formátu PDF Plný text ve formátu HTML
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