Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy

Autor: Li DB, Shi K, Song HP, Guo Y, Wang J, Xu XQ, Liu JM, Yang AL, Wei HY, Zhang B, Yang SY, Liu XL, Zhu QS, Wang ZG
Jazyk: angličtina
Rok vydání: 2011
Předmět:
Zdroj: Nanoscale Research Letters, Vol 6, Iss 1, p 50 (2011)
Druh dokumentu: article
ISSN: 1931-7573
1556-276X
Popis: Abstract Diamond is not only a free standing highly transparent window but also a promising carrier confinement layer for InN based devices, yet little is known of the band offsets in InN/diamond system. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band offset (VBO) of InN/diamond heterostructure. The value of VBO was determined to be 0.39 ± 0.08 eV and a type-I heterojunction with a conduction band offset (CBO) of 4.42 ± 0.08 eV was obtained. The accurate determination of VBO and CBO is important for the application of III-N alloys based electronic devices.
Databáze: Directory of Open Access Journals
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