On the nature of the stretched exponential photoluminescence decay for silicon nanocrystals

Autor: Cardin J, Gourbilleau F, Zatryb G, Podhorodecki A, Misiewicz J
Jazyk: angličtina
Rok vydání: 2011
Předmět:
Zdroj: Nanoscale Research Letters, Vol 6, Iss 1, p 106 (2011)
Druh dokumentu: article
ISSN: 1931-7573
1556-276X
Popis: Abstract The influence of hydrogen rate on optical properties of silicon nanocrystals deposited by sputtering method was studied by means of time-resolved photoluminescence spectroscopy as well as transmission and reflection measurements. It was found that photoluminescence decay is strongly non-single exponential and can be described by the stretched exponential function. It was also shown that effective decay rate probability density function may be recovered by means of Stehfest algorithm. Moreover, it was proposed that the observed broadening of obtained decay rate distributions reflects the disorder in the samples.
Databáze: Directory of Open Access Journals
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