| Autor: |
Miguel C. Sequeira, Jean-Gabriel Mattei, Henrique Vazquez, Flyura Djurabekova, Kai Nordlund, Isabelle Monnet, Pablo Mota-Santiago, Patrick Kluth, Clara Grygiel, Shuo Zhang, Eduardo Alves, Katharina Lorenz |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
Communications Physics, Vol 4, Iss 1, Pp 1-8 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2399-3650 |
| DOI: |
10.1038/s42005-021-00550-2 |
| Popis: |
Gallium nitride is a wide bandgap semiconductor which is generally expected to replace some silicon-based technologies, despite some of its properties still requiring further investigation. Here, using a two-temperature model coupled to molecular dynamics simulations, the authors investigate and predict the effects of strongly ionising radiation in gallium nitride, revealing the mechanism behind its unusual resistance to radiation. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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