| Autor: |
Deyan Dai, Hanqing Liu, Xiangbin Su, Xiangjun Shang, Shulun Li, Haiqiao Ni, Zhichuan Niu |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
Crystals, Vol 13, Iss 10, p 1417 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2073-4352 |
| DOI: |
10.3390/cryst13101417 |
| Popis: |
InAlAs:Be/InGaAs superlattices grown at low temperatures were investigated in this study. To obtain the highest resistivity and mobility simultaneously, a growth temperature above 200 °C was applied. The electrical properties were conducted via Hall effect measurement and a photoresponse test. The experimental results demonstrate that the sample grown at 257.5~260 °C exhibits the highest resistivity (1290 Ω × cm) and lowest carrier concentration (3.18 × 1014 cm−3), along with the highest mobility (187.2 cm2/Vs). Furthermore, the highest photoresponse (1.21) relative to dark resistivity was obtained under 1500 nm excitation. The optimized growth parameter of InGaAs/InAlAs multilayered structures is of great significance for fabricating high-performance terahertz photoconductive semiconductor antennas. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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