Self-organization in irradiated semiconductor crystals caused by thermal annealing

Autor: M. Zavada, O. Konoreva, P. Lytovchenko, V. Opilat, M. Pinkovska, O. Radkevych, V. Tartachnyk
Jazyk: angličtina
Rok vydání: 2018
Předmět:
Zdroj: Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 21, Iss 2, Pp 130-133 (2018)
Druh dokumentu: article
ISSN: 1560-8034
1605-6582
DOI: 10.15407/spqeo21.02.130
Popis: Annealing of complex semiconductors GaP and CdP 2 , irradiated at room temperature by high fluences of electrons within 1…30 MeV energy interval and 80 MeV α -particles, was carried out and main electrical parameters (conductivity σ, carrier concentration n and mobility µ) as well as the positron life-time τ were studied and analyzed. When the point defect concentration excesses some critical value, defects of new kind are formed: oscillation peaks in the isochronous annealing curve appear, and defects with a high cross-section of defect scattering and capture are created. High temperature annealing of the irradiated sample with increased vacancy concentration causes appearance of the vacancy voids with a lower electron density.
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