| Autor: |
C. Panatarani, S. Fitriyadi, N. Balasubramanian, N. S. Parmar, I. M. Joni |
| Jazyk: |
angličtina |
| Rok vydání: |
2016 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 6, Iss 2, Pp 025121-025121-10 (2016) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/1.4942977 |
| Popis: |
ZnO thin films were fabricated by spray pyrolysis (SP) method with p-ZnO : N/n-ZnO:Ga/ITO structure. The X-ray results show that the deposited films have hexagonal wurtzite structure. The EDS results observed that the composition of Ga in ZnO:Ga and N in ZnO:N was 3.73% and 27.73% respectively. The photoluminescence (PL) with excitation wave length of 260 nm shows that ZnO:Ga and ZnO:N films emitted UV emission at ∼393 and ∼388 nm, respectively and the films resistivity was 7.12 and 12.80 Ohm-cm respectively. The electroluminescence of the p-ZnO : N/n-ZnO:Ga/ITO structure was obtained by applying forward bias of 5 volt with 30 mA current, resulting in a 3.35 volt threshold bias with the peak electroluminescence in UV-blue range. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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