Effect of copper surface pre-treatment on the properties of CVD grown graphene
| Autor: | Min-Sik Kim, Jeong-Min Woo, Dae-Myeong Geum, J. R. Rani, Jae-Hyung Jang |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2014 |
| Předmět: | |
| Zdroj: | AIP Advances, Vol 4, Iss 12, Pp 127107-127107-8 (2014) |
| Druh dokumentu: | article |
| ISSN: | 2158-3226 74017438 |
| DOI: | 10.1063/1.4903369 |
| Popis: | Here, we report the synthesis of high quality monolayer graphene on the pre-treated copper (Cu) foil by chemical vapor deposition method. The pre-treatment process, which consists of pre-annealing in a hydrogen ambient, followed by diluted nitric acid etching of Cu foil, helps in removing impurities. These impurities include native copper oxide and rolling lines that act as a nucleation center for multilayer graphene. Raman mapping of our graphene grown on pre-treated Cu foil primarily consisted of ∼98% a monolayer graphene with as compared to 75 % for the graphene grown on untreated Cu foil. A high hydrogen flow rate during the pre-annealing process resulted in an increased I2D/IG ratio of graphene up to 3.55. Uniform monolayer graphene was obtained with a I2D/IG ratio and sheet resistance varying from 1.84 – 3.39 and 1110 – 1290 Ω/□, respectively. |
| Databáze: | Directory of Open Access Journals |
| Externí odkaz: |
|