| Autor: |
Yu-Hsuan Hsu, Xin-Dai Lin, Yi-Hsin Lin, Dong-Sing Wuu, Ray-Hua Horng |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
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| Zdroj: |
Discover Nano, Vol 19, Iss 1, Pp 1-9 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2731-9229 |
| DOI: |
10.1186/s11671-024-04078-6 |
| Popis: |
Abstract In this study, arrays of μLEDs in four different sizes (5 × 5 μm2, 10 × 10 μm2, 25 × 25 μm2, 50 × 50 μm2) were fabricated using a flip-chip bonding process. Two passivation processes were investigated with one involving a single layer of SiO2 deposited using plasma-enhanced chemical vapor deposition (PECVD) and the other incorporating Al2O3 deposited by atomic layer deposition (ALD) beneath the SiO2 layer. Owing to superior coverage and protection, the double-layers passivation process resulted in a three-order lower leakage current of μLEDs in the 5 μm chip-sized μLED arrays. Furthermore, higher light output power of μLEDs was observed in each chip-sized μLED array with double layers passivation. Particularly, the highest EQE value 21.9% of μLEDs array with 5 μm × 5 μm chip size was achieved with the double-layers passivation. The EQE value of μLEDs array was improved by 4.4 times by introducing the double-layers passivation as compared with that of μLEDs array with single layer passivation. Finally, more uniform light emission patterns were observed in the μLEDs with 5 μm × 5 μm chip size fabricated by double-layer passivation process using ImageJ software. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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