| Autor: |
M. Belli, M. Fanciulli, R. de Sousa |
| Jazyk: |
angličtina |
| Rok vydání: |
2020 |
| Předmět: |
|
| Zdroj: |
Physical Review Research, Vol 2, Iss 3, p 033507 (2020) |
| Druh dokumentu: |
article |
| ISSN: |
2643-1564 |
| DOI: |
10.1103/PhysRevResearch.2.033507 |
| Popis: |
The main feature of amorphous materials is the presence of excess vibrational modes at low energies, giving rise to the so-called “boson peak” in neutron and optical spectroscopies. These same modes manifest themselves as two-level systems (TLSs) causing noise and decoherence in qubits and other sensitive devices. Here, we present an experiment that uses the spin relaxation of dangling bonds at the Si/(amorphous)SiO_{2} interface as a probe of TLSs. We introduce a model that is able to explain the observed nonexponential electron spin inversion recovery and provides a measure of the degree of spatial localization and concentration of the TLSs close to the interface, their maximum energy, and its temperature dependence. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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