Slanted n-ZnO/p-GaN nanorod arrays light-emitting diodes grown by oblique-angle deposition

Autor: Ya-Ju Lee, Zu-Po Yang, Fang-Yuh Lo, Jhih-Jhong Siao, Zhong-Han Xie, Yi-Lun Chuang, Tai-Yuan Lin, Jinn-Kong Sheu
Jazyk: angličtina
Rok vydání: 2014
Předmět:
Zdroj: APL Materials, Vol 2, Iss 5, Pp 056101-056101-7 (2014)
Druh dokumentu: article
ISSN: 2166-532X
DOI: 10.1063/1.4874455
Popis: High-efficient ZnO-based nanorod array light-emitting diodes (LEDs) were grown by an oblique-angle deposition scheme. Due to the shadowing effect, the inclined ZnO vapor-flow was selectively deposited on the tip surfaces of pre-fabricated p-GaN nanorod arrays, resulting in the formation of nanosized heterojunctions. The LED architecture composed of the slanted n-ZnO film on p-GaN nanorod arrays exhibits a well-behaving current rectification of junction diode with low turn-on voltage of 4.7 V, and stably emits bluish-white luminescence with dominant peak of 390 nm under the operation of forward injection currents. In general, as the device fabrication does not involve passivation of using a polymer or sophisticated material growth techniques, the revealed scheme might be readily applied on other kinds of nanoscale optoelectronic devices.
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