| Autor: |
Kevkić Tijana S., Nikolić Vojkan R., Stojanović Vladica S., Milosavljević Dragana D., Jovanović Slavica J. |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
Open Physics, Vol 20, Iss 1, Pp 106-116 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2391-5471 |
| DOI: |
10.1515/phys-2022-0012 |
| Popis: |
Modeling of the electrostatic potential for fully depleted (FD) silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistor (MOSFET) is presented in this article. The modeling is based on the analytical solution of two-dimensional Poisson’s equation obtained by using the homotopy perturbation method (HPM). The HPM with suitable boundary conditions results in the so-called HPM solution in general and closed-form, independent of the surface potential. The HPM solution has been applied in modeling the output characteristics of the FDSOI MOSFET, which show good agreement compared with the numerical results. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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