Near ultraviolet photonic integrated lasers based on silicon nitride

Autor: Anat Siddharth, Thomas Wunderer, Grigory Lihachev, Andrey S. Voloshin, Camille Haller, Rui Ning Wang, Mark Teepe, Zhihong Yang, Junqiu Liu, Johann Riemensberger, Nicolas Grandjean, Noble Johnson, Tobias J. Kippenberg
Jazyk: angličtina
Rok vydání: 2022
Předmět:
Zdroj: APL Photonics, Vol 7, Iss 4, Pp 046108-046108-7 (2022)
Druh dokumentu: article
ISSN: 2378-0967
DOI: 10.1063/5.0081660
Popis: Low phase noise lasers based on the combination of III–V semiconductors and silicon photonics are well established in the near-infrared spectral regime. Recent advances in the development of low-loss silicon nitride-based photonic integrated resonators have allowed them to outperform bulk external diode and fiber lasers in both phase noise and frequency agility in the 1550 nm-telecommunication window. Here, we demonstrate for the first time a hybrid integrated laser composed of a gallium nitride-based laser diode and a silicon nitride photonic chip-based microresonator operating at record low wavelengths as low as 410 nm in the near-ultraviolet wavelength region suitable for addressing atomic transitions of atoms and ions used in atomic clocks, quantum computing, or for underwater LiDAR. By self-injection locking of the Fabry–Pérot diode laser to a high-Q (0.4 × 106) photonic integrated microresonator, we reduce the optical phase noise at 461 nm by a factor greater than 100×, limited by the device quality factor and back-reflection.
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