| Autor: |
Li Taotao, Yang Yang, Zhou Liqi, Sun Wenjie, Lin Weiyi, Liu Lei, Zou Xilu, Gao Si, Nie Yuefeng, Shi Yi, Wang Xinran |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
National Science Open, Vol 2 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2097-1168 |
| DOI: |
10.1360/nso/20220055 |
| Popis: |
Single-crystalline transition metal dichalcogenides (TMD) films are of potential application in future electronics and optoelectronics. In this work, a halide vapor phase epitaxy (HVPE) strategy was proposed and demonstrated for the epitaxy of molybdenum diselenide (MoSe2) single crystals, in which metal halide vapors were in-situ produced by the chlorination of molybdenum as sources for the TMD growth. Combined with the epitaxial sapphire substrate, unidirectional domain alignment was successfully achieved and monolayer single-crystal MoSe2 films have been demonstrated on a 2-inch wafer for the first time. A series of characterizations ranging from centimeter to nanometer scales have been implemented to demonstrate the high quality and uniformity of the MoSe2. This work provides a universal strategy for the growth of TMD single-crystal films. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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