Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures
| Autor: | Jo`shqin Sh. Abdullayev, Ibrokhim B. Sapaev |
|---|---|
| Jazyk: | English<br />Russian<br />Ukrainian |
| Rok vydání: | 2024 |
| Předmět: | |
| Zdroj: | East European Journal of Physics, Iss 3, Pp 344-349 (2024) |
| Druh dokumentu: | article |
| ISSN: | 2312-4334 2312-4539 |
| DOI: | 10.26565/2312-4334-2024-3-39 |
| Popis: | In recent years, advances in optoelectronics and electronics have prioritized optimizing semiconductor device performance and reducing power consumption by modeling new semiconductor device geometries. One such innovative structure is the radial p-n junction structure. In this work, we present a concept that submicron three-dimensional simulations were conducted on radial p-n junction structures based on GaAs material to investigate the influence of temperature ranging from 250K to 500K with a step of 50K on the electrophysical distribution, such as space charge, electro-potential, and electric field, in radial p-n junction structures, as well as various forward voltages. In particular, we focus on the shell radius within the structure: 0.5 μm and 1 μm for the shell. The modeling results were compared with the results obtained from solving the theoretical Poisson equation in the cylindrical coordinate system. |
| Databáze: | Directory of Open Access Journals |
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