| Autor: |
Yue Chen, Guangyin Lei, Guo-Quan Lu, Yun-Hui Mei |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 9, Pp 966-971 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2021.3119428 |
| Popis: |
SiC MOSFET allows higher temperature capability with higher switching efficiency than that of conventional Si devices, due to its superior electrical and thermal properties. Nevertheless, there are few reports on the systematic characterization of the SiC MOSFET power module operating at high-temperature. In this paper, a SiC MOSFET power module with planar interconnection was designed and fabricated to achieve low parasitic inductance and improved thermal performance. The static and dynamic performance of the SiC power module were characterized at 200°C. The thermal resistance of the double-sided cooling power module is 28.5% lower than that of the one with single-sided cooling. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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