High Operating Temperature InAs/GaSb Superlattice Based Mid Wavelength Infrared Photodetectors Grown by MOCVD
| Autor: | He Zhu, Jiafeng Liu, Hong Zhu, Yunlong Huai, Meng Li, Zhen Liu, Yong Huang |
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| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: | |
| Zdroj: | Photonics, Vol 8, Iss 12, p 564 (2021) |
| Druh dokumentu: | article |
| ISSN: | 2304-6732 77922794 |
| DOI: | 10.3390/photonics8120564 |
| Popis: | High operating temperature mid-wavelength InAs/GaSb superlattice infrared photodetectors with a single heterojunction structure grown by metal–organic chemical vapor deposition are reported. By inserting a fully-depleted wider-gap barrier layer between the absorber and the p-contact, “diffusion-limited” behavior has been achieved for the heterojunction “PNn” device, in contrast to the conventional pin homojunction device. The PNn device with a 50% cutoff wavelength of 4.5 μm exhibited a dark current of 2.05 × 10−4 A/cm2 and a peak specific detectivity of 1.28 × 1011 cm·Hz·W−1 at 150 K and a reverse bias of −0.1 V. |
| Databáze: | Directory of Open Access Journals |
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