| Autor: |
Henry H. Radamson, Huilong Zhu, Zhenhua Wu, Xiaobin He, Hongxiao Lin, Jinbiao Liu, Jinjuan Xiang, Zhenzhen Kong, Wenjuan Xiong, Junjie Li, Hushan Cui, Jianfeng Gao, Hong Yang, Yong Du, Buqing Xu, Ben Li, Xuewei Zhao, Jiahan Yu, Yan Dong, Guilei Wang |
| Jazyk: |
angličtina |
| Rok vydání: |
2020 |
| Předmět: |
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| Zdroj: |
Nanomaterials, Vol 10, Iss 8, p 1555 (2020) |
| Druh dokumentu: |
article |
| ISSN: |
2079-4991 |
| DOI: |
10.3390/nano10081555 |
| Popis: |
The international technology roadmap of semiconductors (ITRS) is approaching the historical end point and we observe that the semiconductor industry is driving complementary metal oxide semiconductor (CMOS) further towards unknown zones. Today’s transistors with 3D structure and integrated advanced strain engineering differ radically from the original planar 2D ones due to the scaling down of the gate and source/drain regions according to Moore’s law. This article presents a review of new architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology. The discussions cover innovative methods, challenges and difficulties in device processing, as well as new metrology techniques that may appear in the near future. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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