| Autor: |
Dongjun Seong, Su Yeon Lee, Hyun Kyu Seo, Jong-Woo Kim, Minsoo Park, Min Kyu Yang |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
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| Zdroj: |
Materials, Vol 16, Iss 5, p 2066 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
1996-1944 |
| DOI: |
10.3390/ma16052066 |
| Popis: |
A new architecture has become necessary owing to the power consumption and latency problems of the von Neumann architecture. A neuromorphic memory system is a promising candidate for the new system as it has the potential to process large amounts of digital information. A crossbar array (CA), which consists of a selector and a resistor, is the basic building block for the new system. Despite the excellent prospects of crossbar arrays, the biggest obstacle for them is sneak current, which can cause a misreading between the adjacent memory cells, thus resulting in a misoperation in the arrays. The chalcogenide-based ovonic threshold switch (OTS) is a powerful selector with highly nonlinear I–V characteristics that can be used to address the sneak current problem. In this study, we evaluated the electrical characteristics of an OTS with a TiN/GeTe/TiN structure. This device shows nonlinear DC I–V characteristics, an excellent endurance of up to 109 in the burst read measurement, and a stable threshold voltage below 15 mV/dec. In addition, at temperatures below 300 °C, the device exhibits good thermal stability and retains an amorphous structure, which is a strong indication of the aforementioned electrical characteristics. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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