| Autor: |
Fernando Avila Herrera, Yoko Hirano, Takahiro Iizuka, Mitiko Miura-Mattausch, Hideyuki Kikuchihara, Dondee Navarro, Hans Jurgen Mattausch, Akira Ito |
| Jazyk: |
angličtina |
| Rok vydání: |
2019 |
| Předmět: |
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| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 7, Pp 1293-1301 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2019.2948648 |
| Popis: |
A novel compact model has been developed, which considers the origin of the short-channel effect (SCE) on the basis of the potential distribution along the channel. Thus an enlargement of the insight into SCE suppression in advanced thin-layer MOSFETs is enabled. The model is extended to include the diffusion region resistance effects caused by the drain-side doping by applying the methodology of the industry-standard high-voltage MOSFET model HiSIM_HV. Usage for studying possible device optimizations revealed that clear improvements in the subthreshold characteristics due to suppression of SCEs can be achieved by slightly increasing the drain-side diffusion resistance. Disadvantageous effects on the device and circuit performances were found to be negligible. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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