| Autor: |
Yuanyuan Xue, Zujun Wang, Wei Chen, Minbo Liu, Baoping He, Zhibin Yao, Jiangkun Sheng, Wuying Ma, Guantao Dong, Junshan Jin |
| Jazyk: |
angličtina |
| Rok vydání: |
2017 |
| Předmět: |
|
| Zdroj: |
Sensors, Vol 17, Iss 12, p 2781 (2017) |
| Druh dokumentu: |
article |
| ISSN: |
1424-8220 |
| DOI: |
10.3390/s17122781 |
| Popis: |
Four-transistor (T) pinned photodiode (PPD) CMOS image sensors (CISs) with four-megapixel resolution using 11µm pitch high dynamic range pixel were radiated with 3 MeV and 10MeV protons. The dark signal was measured pre- and post-radiation, with the dark signal post irradiation showing a remarkable increase. A theoretical method of dark signal distribution pre- and post-radiation is used to analyze the degradation mechanisms of the dark signal distribution. The theoretical results are in good agreement with experimental results. This research would provide a good understanding of the proton radiation effects on the CIS and make it possible to predict the dark signal distribution of the CIS under the complex proton radiation environments. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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