| Autor: |
A. Elsayed, M. M. K. Shehata, C. Godfrin, S. Kubicek, S. Massar, Y. Canvel, J. Jussot, G. Simion, M. Mongillo, D. Wan, B. Govoreanu, I. P. Radu, R. Li, P. Van Dorpe, K. De Greve |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
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| Zdroj: |
npj Quantum Information, Vol 10, Iss 1, Pp 1-9 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2056-6387 |
| DOI: |
10.1038/s41534-024-00864-3 |
| Popis: |
Abstract Silicon spin qubits are promising candidates for scalable quantum computers, due to their coherence and compatibility with CMOS technology. Advanced industrial processes ensure wafer-scale uniformity and high device yield, but traditional transistor processes cannot be directly transferred to qubit structures. To leverage the micro-electronics industry expertise, we customize a 300 mm wafer fabrication line for silicon MOS qubit integration. With careful optimization of the gate stack, we report uniform quantum dot operation at the Si/SiO2 interface at mK temperature. We measure a record-low average noise with a value of 0.61 $${\rm{\mu }}{\rm{eVH}}{{\rm{z}}}^{-0.5}$$ μ eVH z − 0.5 at 1 Hz and even below 0.1 $${\rm{\mu }}{\rm{eVH}}{{\rm{z}}}^{-0.5}$$ μ eVH z − 0.5 for some operating conditions. Statistical analysis of the charge noise measurements show that the noise source can be described by a two-level fluctuator model. This reproducible low noise level, in combination with uniform operation of our quantum dots, marks CMOS manufactured spin qubits as a mature platform towards scalable high-fidelity qubits. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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