| Autor: |
Nikolay I. Plusnin |
| Jazyk: |
angličtina |
| Rok vydání: |
2017 |
| Předmět: |
|
| Zdroj: |
Modern Electronic Materials, Vol 3, Iss 2, Pp 57-65 (2017) |
| Druh dokumentu: |
article |
| ISSN: |
2452-1779 |
| DOI: |
10.1016/j.moem.2017.09.005 |
| Popis: |
The metal–silicon thin-film system is not isostructural and furthermore exhibits pronounced interdiffusion and chemical reactions. Therefore the growth of metallic films on silicon leads to a nanosize nonhomogenity of films and a high concentration of defects, especially at interface. The material also contains stressed transition layer, which can contain alloys and/or compounds (silicides). We have considered theoretical viewpoints and reviewed experimental data on the growth and properties of metallic nanofilms (including multilayered ones) on silicon, and also provided a brief review of their applications. The films consist either of atomic-sized, quabquantum sized and quantum sized layers. We have suggested a low temperature film growth technology based on freezing growing layers during deposition by maintaining a low temperature of the substrate and using an atomic beam with a reduced heat power. The technology uses a specially shaped deposition system in which the distance between the source and the substrate is comparable to their size or smaller. Furthermore, we use a special time sequence of deposition that provides for a reduced substrate surface temperature due to greater intervals between deposition pulses. This growth method of atomically thin films and multilayered nanofilms excludes interdiffusion between the layers, reduces three-dimensional growth rate and relatively increases lateral layer growth rate. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
