Autor: |
Lukas Seidel, Teren Liu, Omar Concepción, Bahareh Marzban, Vivien Kiyek, Davide Spirito, Daniel Schwarz, Aimen Benkhelifa, Jörg Schulze, Zoran Ikonic, Jean-Michel Hartmann, Alexei Chelnokov, Jeremy Witzens, Giovanni Capellini, Michael Oehme, Detlev Grützmacher, Dan Buca |
Jazyk: |
angličtina |
Rok vydání: |
2024 |
Předmět: |
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Zdroj: |
Nature Communications, Vol 15, Iss 1, Pp 1-8 (2024) |
Druh dokumentu: |
article |
ISSN: |
2041-1723 |
DOI: |
10.1038/s41467-024-54873-z |
Popis: |
Abstract Over the last 30 years, group-IV semiconductors have been intensely investigated in the quest for a fundamental direct bandgap semiconductor that could yield the last missing piece of the Si Photonics toolbox: a continuous-wave Si-based laser. Along this path, it has been demonstrated that the electronic band structure of the GeSn/SiGeSn heterostructures can be tuned into a direct bandgap quantum structure providing optical gain for lasing. In this paper, we present a versatile electrically pumped, continuous-wave laser emitting at a near-infrared wavelength of 2.32 µm with a low threshold current of 4 mA. It is based on a 6-periods SiGeSn/GeSn multiple quantum-well heterostructure. Operation of the micro-disk laser at liquid nitrogen temperature is possible by changing to pulsed operation and reducing the heat load. The demonstration of a continuous-wave, electrically pumped, all-group-IV laser is a major breakthrough towards a complete group-IV photonics technology platform. |
Databáze: |
Directory of Open Access Journals |
Externí odkaz: |
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