| Autor: |
Hanghang Lv, Yanrong Cao, Maodan Ma, Zhiheng Wang, Xinxiang Zhang, Chuan Chen, Linshan Wu, Ling Lv, Xuefeng Zheng, Yongkun Wang, Wenchao Tian, Xiaohua Ma |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
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| Zdroj: |
Micromachines, Vol 14, Iss 7, p 1457 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2072-666X |
| DOI: |
10.3390/mi14071457 |
| Popis: |
In this paper, a P-type GaN buried layer is introduced into the buffer layer of AlGaN/GaN HEMTs, and the effect of the P-type GaN buried layer on the device’s temperature characteristics is studied using Silvaco TCAD software. The results show that, compared to the conventional device structure, the introduction of a P-type GaN buried layer greatly weakens the peak of the channel electric field between the gate and drain of the device. This leads to a more uniform electric field distribution, a substantial reduction in the lattice temperature of the device, and a more uniform temperature distribution. Therefore, the phenomenon of negative resistance caused by self-heating effect is significantly mitigated, while the breakdown performance of the device is also notably enhanced. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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