| Autor: |
Hung-Chi Han, Zhixing Zhao, Steffen Lehmann, Edoardo Charbon, Christian Enz |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
IEEE Access, Vol 11, Pp 56951-56957 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2169-3536 |
| DOI: |
10.1109/ACCESS.2023.3283298 |
| Popis: |
The paper presents a novel approach to the modeling of the back-gate dependence of the threshold voltage of Fully Depleted Silicon-On-Insulator (FDSOI) MOSFETs down to cryogenic temperatures by using slope factors with a gate coupling effect. The FDSOI technology is well-known for its capability to modulate the threshold voltage efficiently by the back-gate voltage. The proposed model analytically demonstrates the threshold voltage as a function of the back-gate voltage without the pre-defined threshold condition, and it requires only a calibration point, i.e., a threshold voltage with the corresponding back-gate voltage, front- and back-gate slope factors, and work functions of front and back gates. The model has been validated over a wide range of the back-gate voltages at room temperature and down to 3 K. It is suitable for optimizing low-power circuits at cryogenic temperatures for quantum computing applications. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
