| Autor: |
Jae-Min Sim, In-Ku Kang, Sung-In Hong, Changhan Kim, Changhyun Cho, Kyunghoon Min, Yun-Heub Song |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
Memories - Materials, Devices, Circuits and Systems, Vol 5, Iss , Pp 100073- (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2773-0646 |
| DOI: |
10.1016/j.memori.2023.100073 |
| Popis: |
In this paper, we propose a gate-all-around with back-gate (GAAB) 3D NAND flash memory structure for high performance and reliability. First, in the selected string, we confirmed that the proposed structure can improve program performance using negative bit-line voltage scheme with pass disturbance-less characteristic. Second, in the inhibited string, we confirmed self-boosting, which is perfectly performed by the back-gate bias without the unselected WL. Based on these potentials of the GAAB NAND structure, we would like to propose our GAAB structure as a future structure with the advantages of high performance and high reliability characteristics compared with conventional GAA-type NAND flash memory. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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