| Autor: |
Yuliang Zhao, Zhenfu Wang, Abdullah Demir, Guowen Yang, Shufang Ma, Bingshe Xu, Cheng Sun, Bo Li, Bocang Qiu |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
IEEE Photonics Journal, Vol 13, Iss 3, Pp 1-8 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
1943-0655 |
| DOI: |
10.1109/JPHOT.2021.3073732 |
| Popis: |
We report on the development of a 940-nm diode laser bar based on epitaxially stacked active regions by employing a tunnel junction structure. The tunnel junction and the device parameters were systematically optimized to achieve high output and power conversion efficiency. A record quasi-continuous wave (QCW) peak power of 1.91 kW at 25 °C was demonstrated from a 1-cm wide bar with a 2-mm cavity length at 1 kA drive current (200 μs pulse width and 10 Hz repetition rate). Below the onset of the thermal rollover, the slope efficiency was as high as 2.23 W/A. The maximum power conversion efficiency of 61.1% at 25 °C was measured at 300 A. Reducing the heatsink temperature to 15 °C led to a marginal increase in the peak power to 1.95 kW. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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