SiC as a core-edge integrated wall solution in DIII-D

Autor: S. Zamperini, T. Abrams, J. Nichols, E. Unterberg, A. Lasa, P. Stangeby, S. Bringuier, D. Rudakov, J.D. Elder
Jazyk: angličtina
Rok vydání: 2023
Předmět:
Zdroj: Nuclear Materials and Energy, Vol 37, Iss , Pp 101535- (2023)
Druh dokumentu: article
ISSN: 2352-1791
DOI: 10.1016/j.nme.2023.101535
Popis: Silicon carbide (SiC) is a promising material for use in a fusion reactor due to its low hydrogenic diffusivity, high temperature strength and resilience under neutron irradiation [1,2]. To assess SiC as a main wall material in DIII-D, simulations with TRIM.SP and DIVIMP are performed on a well-diagnosed L-mode discharge. The effective charge, Zeff, across the separatrix is used as a figure of merit in comparing SiC to the current graphite walls. It is found that SiC is expected to reduce Zeff, potentially by as much as ∼50 %. It is discussed how SiC may be expected to “self-condition” and create wall conditions similar to siliconization, further lowering Zeff due to efficient oxygen gettering. The potential benefits are reviewed and a path towards SiC walls in DIII-D is presented.
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