A Physical TCAD Mobility Model of Amorphous In-Ga-Zn-O (a-IGZO) Devices with Spatially Varying Mobility Edges, Band-Tails, and Enhanced Low-Temperature Convergence

Autor: Mischa Thesberg, Franz Schanovsky, Ying Zhao, Markus Karner, Jose Maria Gonzalez-Medina, Zlatan Stanojević, Adrian Chasin, Gerhard Rzepa
Jazyk: angličtina
Rok vydání: 2024
Předmět:
Zdroj: Micromachines, Vol 15, Iss 7, p 829 (2024)
Druh dokumentu: article
ISSN: 2072-666X
DOI: 10.3390/mi15070829
Popis: Amorphous indium gallium zinc oxide (a-IGZO) is becoming an increasingly important technological material. Transport in this material is conceptualized as the heavy disorder of the material causing a conduction or mobility band-edge that randomly varies and undulates in space across the entire system. Thus, transport is envisioned as being dominated by percolation physics as carriers traverse this varying band-edge landscape of “hills” and “valleys”. It is then something of a missed opportunity to model such a system using only a compact approach—despite this being the primary focus of the existing literature—as such a system can easily be faithfully reproduced as a true microscopic TCAD model with a real physically varying potential. Thus, in this work, we develop such a “microscopic” TCAD model of a-IGZO and detail a number of key aspects of its implementation. We then demonstrate that it can accurately reproduce experimental results and consider the issue of the addition of non-conducting band-tail states in a numerically efficient manner. Finally, two short studies of 3D effects are undertaken to illustrate the utility of the model: specifically, the cases of variation effects as a function of device size and as a function of surface roughness scattering.
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