| Autor: |
Su-Keun Eom, Min-Woo Kong, Ho-Young Cha, Kwang-Seok Seo |
| Jazyk: |
angličtina |
| Rok vydání: |
2019 |
| Předmět: |
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| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 7, Pp 908-913 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2019.2934745 |
| Popis: |
In this work, we report high-performance InGaAs quantum-well MOSFETs with optimized bi-layer high-k gate dielectrics incorporating high-quality plasma-assisted atomic -layer-deposited (PA-ALD) HfOxNy interfacial layer (IL). With more than 1 nm IL deposition to passivate the InGaAs surface, excellent sub-threshold characteristics (SSmin = 68 mV/dec) were achieved through the proposed gate stack technology. We performed positive-bias-temperature-instability (PBTI) measure -ments in order to ensure a reliable gate operation. The proposed bi-layer III-V gate stack achieved the excellent value of maximum gate overdrive voltage (VOV, max) of 0.49 V with CET = 1.04 nm. The proposed gate stack has a great potential for III-V MOSFET technology to low power logic applications. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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