Asymmetric Ge/SiGe coupled quantum well modulators
| Autor: | Zhang Yi, Gao Jianfeng, Qin Senbiao, Cheng Ming, Wang Kang, Kai Li, Sun Junqiang |
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| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: | |
| Zdroj: | Nanophotonics, Vol 10, Iss 6, Pp 1765-1773 (2021) |
| Druh dokumentu: | article |
| ISSN: | 2192-8606 2192-8614 |
| DOI: | 10.1515/nanoph-2021-0007 |
| Popis: | We design and demonstrate an asymmetric Ge/SiGe coupled quantum well (CQW) waveguide modulator for both intensity and phase modulation with a low bias voltage in silicon photonic integration. The asymmetric CQWs consisting of two quantum wells with different widths are employed as the active region to enhance the electro-optical characteristics of the device by controlling the coupling of the wave functions. The fabricated device can realize 5 dB extinction ratio at 1446 nm and 1.4 × 10−3 electrorefractive index variation at 1530 nm with the associated modulation efficiency VπLπ of 0.055 V cm under 1 V reverse bias. The 3 dB bandwidth for high frequency response is 27 GHz under 1 V bias and the energy consumption per bit is less than 100 fJ/bit. The proposed device offers a pathway towards a low voltage, low energy consumption, high speed and compact modulator for silicon photonic integrated devices, as well as opens possibilities for achieving advanced modulation format in a more compact and simple frame. |
| Databáze: | Directory of Open Access Journals |
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