Improved Vth Stability and Gate Reliability of GaN-Based MIS-HEMTs by Employing Alternating O2 Plasma Treatment
| Autor: | Xinling Xie, Qiang Wang, Maolin Pan, Penghao Zhang, Luyu Wang, Yannan Yang, Hai Huang, Xin Hu, Min Xu |
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| Jazyk: | angličtina |
| Rok vydání: | 2024 |
| Předmět: | |
| Zdroj: | Nanomaterials, Vol 14, Iss 6, p 523 (2024) |
| Druh dokumentu: | article |
| ISSN: | 14060523 2079-4991 |
| DOI: | 10.3390/nano14060523 |
| Popis: | The Vth stability and gate reliability of AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) with alternating O2 plasma treatment were systematically investigated in this article. It was found that the conduction band offset at the Al2O3/AlGaN interface was elevated to 2.4 eV, which contributed to the suppressed gate leakage current. The time-dependent dielectric breakdown (TDDB) test results showed that the ALD-Al2O3 with the alternating O2 plasma treatment had better quality and reliability. The AlGaN/GaN MIS-HEMT with the alternating O2 plasma treatment demonstrated remarkable advantages in higher Vth stability under high-temperature and long-term gate bias stress. |
| Databáze: | Directory of Open Access Journals |
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