| Autor: |
Daniel Connelly, Richard Burton, Nyles W. Cody, Pavel Fastenko, Marek Hytha, Robert Stephenson, Hideki Takeuchi, Keith Doran Weeks, Robert Mears |
| Jazyk: |
angličtina |
| Rok vydání: |
2018 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1173-1178 (2018) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2018.2872689 |
| Popis: |
Oxygen-Inserted (OI) layers are shown to shield a buried boron profile from oxidation enhanced diffusion. A TCAD model for the OI layer, including point defect and dopant trapping, as implemented in Sentaurus Process is shown to match experimental results, demonstrating the retention of steeper boron profiles after oxidation. Incorporation of the oxygen insertion layers into a CMOS process increases on-current and reduces threshold variability and mismatch. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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