| Autor: |
Dmitri E. Nikolichev, Ruslan N. Kriukov, Alexey V. Nezhdanov, Anton V. Zdoroveyshchev, Yuri M. Kuznetsov, Daniil A. Zdoroveyshchev, Valery P. Lesnikov, Michael V. Dorokhin, Polina B. Demina, Alexey A. Skrylev |
| Jazyk: |
English<br />Russian |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
Конденсированные среды и межфазные границы, Vol 25, Iss 3 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
1606-867X |
| DOI: |
10.17308/kcmf.2023.25/11262 |
| Popis: |
Silicon compounds have a wide range of electrical properties. In particular, the possibility of creating thermoelectric converters based on them looks extremely attractive. The use of most silicides as thermoelectrics today is limited by their low efficiency. The development of approaches consisting in the creation of low-dimensional structures using non-equilibrium formation methods is one of the priority directions for improving the properties of thermoelectric generators. Determination of the effect of technological regimes on the structure, phase-chemical composition and thermoelectric properties of metal-silicide structures is a key task, the solution of which will allow creating highly efficient thermoelectric generators based on them. Thin-film structures with a layer thickness of ~50 nm formed at different growth temperatures by pulsed laser deposition on two types of substrates: sapphire and gallium arsenide coated with an Al2O3 nanolayer were studied in this work. On the formed samples, a chemical analysis and a study of the phase composition were performed. Chemical analysis was carried out by X-ray photoelectron spectroscopy with the chemical composition depth profiling. The phase composition was studied by Raman spectroscopy. In addition, analysis of the elements in the films was carried out by X-ray spectral microanalysis based on a scanning electron microscope. To determine the thermoelectric properties of the formed thin-film structures, the temperature dependences of the Seebeck coefficient and the electrical conductivity coefficient were recorded. The dependence of the thermoelectric characteristics of iron silicide films on the phase composition is analyzed. In particular, measurements of the thermoelectric properties of FeSix thin-film structures registered the manifestation of a strong thermoelectric effect in layers with the maximum number of chemical bonds between iron and silicon. The parameters of the growth process at which the most effective formation of iron-silicon chemical bonds is achieved were determined using the method of X-ray photoelectron spectroscopy. Line shifts from the beta phase of iron disilicide were found in the Raman spectra and the reasons for their appearance were proposed |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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