| Autor: |
Jang Hyun Kim, Tae Chan Kim, Garam Kim, Hyun Woo Kim, Sangwan Kim |
| Jazyk: |
angličtina |
| Rok vydání: |
2020 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1345-1349 (2020) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2020.3033313 |
| Popis: |
In this article, an investigation has been performed to statistically analyze the entire subthreshold characteristics of tunnel field-effect transistor (TFET) depending on a gate work function variation (WFV). Firstly, the current variations are evaluated through turn-on voltage (VON) and threshold voltage (VT) with help of technology computer-aided design (TCAD) simulation. Secondly, the variation of VT and VON are quantitatively analyzed by coefficient of determination (R2) in the regression analysis. The R2 values are extracted according to the divided the gate prats. Finally, it is confirmed that the WFV of the gate parts causes the current variation in areas where tunneling is varied mainly according to the gate bias. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
