| Autor: |
Won Douk Jang, Young Jun Yoon, Min Su Cho, Jun Hyeok Jung, Sang Ho Lee, Jaewon Jang, Jin-Hyuk Bae, In Man Kang |
| Jazyk: |
angličtina |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
Micromachines, Vol 10, Iss 11, p 749 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
2072-666X |
| DOI: |
10.3390/mi10110749 |
| Popis: |
In this paper, a germanium-based gate-metal-core vertical nanowire tunnel field effect transistor (VNWTFET) has been designed and optimized using the technology computer-aided design (TCAD) simulation. In the proposed structure, by locating the gate-metal as a core of the nanowire, a more extensive band-to-band tunneling (BTBT) area can be achieved compared with the conventional core−shell VNWTFETs. The channel thickness (Tch), the gate-metal height (Hg), and the channel height (Hch) were considered as the design parameters for the optimization of device performances. The designed gate-metal-core VNWTFET exhibits outstanding performance, with an on-state current (Ion) of 80.9 μA/μm, off-state current (Ioff) of 1.09 × 10−12 A/μm, threshold voltage (Vt) of 0.21 V, and subthreshold swing (SS) of 42.8 mV/dec. Therefore, the proposed device was demonstrated to be a promising logic device for low-power applications. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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