| Autor: |
S K Gorman, M A Broome, J G Keizer, T F Watson, S J Hile, W J Baker, M Y Simmons |
| Jazyk: |
angličtina |
| Rok vydání: |
2016 |
| Předmět: |
|
| Zdroj: |
New Journal of Physics, Vol 18, Iss 5, p 053041 (2016) |
| Druh dokumentu: |
article |
| ISSN: |
1367-2630 |
| DOI: |
10.1088/1367-2630/18/5/053041 |
| Popis: |
The long term scaling prospects for solid-state quantum computing architectures relies heavily on the ability to simply and reliably measure and control the coherent electron interaction strength, known as the tunnel coupling, t _c . Here, we describe a method to extract the t _c between two quantum dots (QDs) utilising their different tunnel rates to a reservoir. We demonstrate the technique on a few donor triple QD tunnel coupled to a nearby single-electron transistor (SET) in silicon. The device was patterned using scanning tunneling microscopy-hydrogen lithography allowing for a direct measurement of the tunnel coupling for a given inter-dot distance. We extract ${t}_{{\rm{c}}}=5.5\pm 1.8\;{\rm{GHz}}$ and ${t}_{{\rm{c}}}=2.2\pm 1.3\;{\rm{GHz}}$ between each of the nearest-neighbour QDs which are separated by 14.5 nm and 14.0 nm, respectively. The technique allows for an accurate measurement of t _c for nanoscale devices even when it is smaller than the electron temperature and is an ideal characterisation tool for multi-dot systems with a charge sensor. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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