Engineering Silicon Oxide by Argon Ion Implantation for High Performance Resistance Switching

Autor: L. Zhao, W. H. Ng, A. P. Knights, D. V. Stevanovic, D. J. Mannion, A. Mehonic, A. J. Kenyon
Jazyk: angličtina
Rok vydání: 2022
Předmět:
Zdroj: Frontiers in Materials, Vol 9 (2022)
Druh dokumentu: article
ISSN: 2296-8016
DOI: 10.3389/fmats.2022.813407
Popis: We report that implanting argon ions into a film of uniform atomic layer deposition (ALD)-grown SiOx enables electroforming and switching within films that previously failed to electroform at voltages
Databáze: Directory of Open Access Journals