Trap-state mapping to model GaN transistors dynamic performance

Autor: Nicola Modolo, Carlo De Santi, Andrea Minetto, Luca Sayadi, Gerhard Prechtl, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Jazyk: angličtina
Rok vydání: 2022
Předmět:
Zdroj: Scientific Reports, Vol 12, Iss 1, Pp 1-10 (2022)
Druh dokumentu: article
ISSN: 2045-2322
DOI: 10.1038/s41598-022-05830-7
Popis: Abstract Trapping phenomena degrade the dynamic performance of wide-bandgap transistors. However, the identification of the related traps is challenging, especially in presence of non-ideal defects. In this paper, we propose a novel methodology (trap-state mapping) to extract trap parameters, based on the mathematical study of stretched exponential recovery kinetics. To demonstrate the effectiveness of the approach, we use it to identify the properties of traps in AlGaN/GaN transistors, submitted to hot-electron stress. After describing the mathematical framework, we demonstrate that the proposed methodology can univocally describe the properties of the distribution of trap states. In addition, to prove the validity and the usefulness of the model, the trap properties extracted mathematically are used as input for TCAD simulations. The results obtained by TCAD closely match the experimental transient curves, thus confirming the accuracy of the trap-state mapping procedure. This methodology can be adopted also on other technologies, thus constituting a universal approach for the analysis of multiexponential trapping kinetics.
Databáze: Directory of Open Access Journals
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