| Autor: |
Ram Krishna Ghosh, Santanu Mahapatra |
| Jazyk: |
angličtina |
| Rok vydání: |
2013 |
| Předmět: |
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| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 1, Iss 10, Pp 175-180 (2013) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2013.2292799 |
| Popis: |
We investigate the gate controlled direct band-to-band tunneling (BTBT) current in monolayer transition-metal dichalcogenide (MX2) channel-based tunnel field effect transistor (TFET). Five MX2 materials (MoS2,MoSe2,MoTe2,WS2,WSe2) in their 2-D sheet forms are considered for this purpose. We first study the real and imaginary band structure of those MX2 materials by density-functional theory (DFT), which is then used to evaluate the gate-controlled current under the Wentzel-Kramers-Brillouin (WKB) approximation. It is shown that all five MX2 support direct BTBT in their monolayer sheet forms and offer an average ON current and subthreshold slope of 150 μA/μm (at Vd=0.1 V) and 4 mV/dec, respectively. Furthermore, we also demonstrate the strain effect on the complex band structures and the performances of MX2 based TFETs. It is observed that a certain tensile strain becomes favorable for the improvement of ON-current performances. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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