MOSs-String-Triggered Silicon-Controlled Rectifier (MTSCR) ESD Protection Device for 1.8 V Application
| Autor: | Ruibo Chen, Hao Wei, Hongxia Liu, Fei Hou, Qi Xiang, Feibo Du, Cong Yan, Tianzhi Gao, Zhiwei Liu |
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| Jazyk: | angličtina |
| Rok vydání: | 2023 |
| Předmět: | |
| Zdroj: | Micromachines, Vol 14, Iss 3, p 632 (2023) |
| Druh dokumentu: | article |
| ISSN: | 14030632 2072-666X |
| DOI: | 10.3390/mi14030632 |
| Popis: | In this work, a new low voltage-triggered silicon-controlled rectifier named MTSCR is realized in a 65 nm CMOS process for low voltage-integrated circuits electrostatic discharge (ESD) protections. The MTSCR incorporates an external NMOSs-string, which drives the internal NMOS (INMOS) of MTSCR to turn on, and then the INMOS drive SCR structure to turn on. Compared with the existing low trigger voltage (Vt1) ESD component named diodes-string-triggered SCR (DTSCR), the MTSCR can realize the same low Vt1 characteristic but less area penalty of ~44.3% reduction. The results of the transmission line pulsing (TLP) measurement shows that the MTSCR possesses above 2.42 V holding voltage (Vh) and a low Vt1 of ~5.03 V, making it very suitable for the ESD protections for 1.8 V input/output (I/O) ports in CMOS technologies. |
| Databáze: | Directory of Open Access Journals |
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