Noise Parameter Analysis of SiGe HBTs for Different Sizes in the Breakdown Region

Autor:	Chie-In Lee, Yan-Ting Lin, Wei-Cheng Lin
Jazyk:	angličtina
Rok vydání:	2016
Předmět:	Electrical engineering. Electronics. Nuclear engineering TK1-9971
Zdroj:	Active and Passive Electronic Components, Vol 2016 (2016)
Druh dokumentu:	article
ISSN:	0882-7516 1563-5031
DOI:	10.1155/2016/8506507
Popis:	Noise parameters of silicon germanium (SiGe) heterojunction bipolar transistors (HBTs) for different sizes are investigated in the breakdown region for the first time. When the emitter length of SiGe HBTs shortens, minimum noise figure at breakdown decreases. In addition, narrower emitter width also decreases noise figure of SiGe HBTs in the avalanche region. Reduction of noise performance for smaller emitter length and width of SiGe HBTs at breakdown resulted from the lower noise spectral density resulting from the breakdown mechanism. Good agreement between experimental and simulated noise performance at breakdown is achieved for different sized SiGe HBTs. The presented analysis can benefit the RF circuits operating in the breakdown region.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/18d97d478e114213ae05b8d37e1b9376 Zobrazit plný text záznamu View record in DOAJ Plný text ve formátu PDF