Spatial defects nanoengineering for bipolar conductivity in MoS2

Autor: Xiaorui Zheng, Annalisa Calò, Tengfei Cao, Xiangyu Liu, Zhujun Huang, Paul Masih Das, Marija Drndic, Edoardo Albisetti, Francesco Lavini, Tai-De Li, Vishal Narang, William P. King, John W. Harrold, Michele Vittadello, Carmela Aruta, Davood Shahrjerdi, Elisa Riedo
Jazyk: angličtina
Rok vydání: 2020
Předmět:
Zdroj: Nature Communications, Vol 11, Iss 1, Pp 1-12 (2020)
Druh dokumentu: article
ISSN: 2041-1723
DOI: 10.1038/s41467-020-17241-1
Popis: Bipolar conductivity is fundamental for electronic devices based on two-dimensional semiconductors. Here, the authors report on-demand p- and n-doping of monolayer MoS2 via defects engineering using thermochemical scanning probe lithography, and achieve a p-n junction with rectification ratio over 104.
Databáze: Directory of Open Access Journals